Carl Zeiss Sms Ltd.

Pixer Technology Ltd

Carl Zeiss Smt Gmbh

Guy Ben-Zvi

Vladimir Dmitriev

Eitan Zait

Erez Graitzer

Sergey Oshemkov

Ofir Sharoni

Steven Labovitz

Igor Varvaruk

Rainer Pforr

Markus Mengel

Vladimir Kruglyakov

Nikolay Nikolaevich Guletsky

Ralph Klaesges

Eran Chason

Nikolay N Guletskiy

Vladimir J Dmitriev

A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.

Analyses of measurement data

A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission () across the photo mask () can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask () can be determined () based on the transmittance variation distribution of the photo mask.

Critical dimension uniformity correction by scanner signature control

A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.

Controllable transmission and phase compensation of transparent material

A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.

Lithographic targets for uniformity control

Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.

Method and apparatus for DUV transmission mapping

In general, in one aspect, a method includes determining a critical dimension (CD) distribution on a photomask by measuring deep Ultra-Violet (DUV) transmission across the photomask.

Method and apparatus for mapping of line-width size distributions on photomasks

A method for compensating for critical dimension (CD) variations of pattern lines of a wafer, by the correcting the CD of the corresponding photomask. The photomask comprises a transparent substrate having two substantially opposite surfaces, a first back surface and a second front surface on which front surface an absorbing coating is provided, on which the pattern lines were formed by removing the coating at the pattern lines. The method comprises: determining CD variations across regions of a wafer exposure field relating to the photomask; and providing Shading Elements (SE) within the substrate of the photomask in regions which correlates to regions of the wafer exposure field where CD variations greater than a predetermined target value were determined, whereby the shading elements attenuate light passing through the regions, so as to compensate for the CD variations on the wafer and hence provide and improved CD tolerance wafer.

Method for correcting critical dimension variations in photomasks

A system and method for repairing a photomask () for use in a photolithography process is disclosed, the photomask (), consisting of a substrate layer () and a chrome layer () over the substrate layer (), having a defect () in the chrome layer (), the method comprising: providing a pulsed laser source () for generating an ultra-short pulsed laser beam; providing optical elements for scanning, directing and focusing the pulsed laser beam at a desired target location; directing the pulsed laser beam through the substrate and focusing it on a target location located inside the substrate adjacent the defect () to write a diffractive optical element (), thus changing the scattering properties of the substrate at the target location.

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Shechania, Israel

Guy Ben-Zvi