Kla Tencor Corporation

Kla Corporation

Guy Ben Dov

Barak Bringoltz

Vladimir Levinski

Daniel Kandel

Yoel Feler

Noam Sapiens

Alexander Svizher

Meir Aloni

Hadar Shalmoni

Mark Ghinovker

Roie Volkovich

Inna Tarshish-Shapir

Diana Shaphirov

Chris Steely

Paykin Irina

Enna Leshinsky-Altshuller

Amnon Manassen

Zeev Bomzon

Daria Negri

Ohad Bachar

Boris Golovanevsky

Irina Vakshtein

Ofir Aharon

Irina Paykin

A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

Field-to-field corrections using overlay targets

A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.

Metrology methods, systems and targets are provided, which implement a side by side paradigm. Adjacent cells with periodic structures are used to extract the overlay error, e.g., by introducing controllable phase shifts or image shifts which enable algorithmic computation of the overlay. The periodic structures are designed to exhibit a rotational symmetry to support the computation and reduce errors.

Symmetric target design in scatterometry overlay metrology

Methods and calibrations modules are provided, for calibrating a pupil center in scatterometry overlay measurements. The calibration comprises calculating fluctuations from a first statistical figure of merit such as an average of an overlay signal per pixel at the pupil and significantly reducing, for example minimizing, the fluctuations with respect to a second statistical figure of merit thereof, such as a pupil weighted variance of the fluctuations.

Pupil plane calibration for scatterometry overlay measurement

Systems and methods are provided which derive target characteristics from interferometry images taken at multiple phase differences between target beams and reference beams yielding the interferometry images. The illumination of the target and the reference has a coherence length of less than 30 microns to enable scanning the phase through the coherence length of the illumination. The interferometry images are taken at the pupil plane and/or in the field plane to combine angular and spectroscopic scatterometry data that characterize and correct target topography and enhance the performance of metrology systems.

Phase characterization of targets

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Haifa, Israel

Guy Ben Dov