Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Imec Vzw

Photovoltech

Guy Beaucarne

Emmanuel Van Kerschaver

Chetan Singh Solanki

Frederic Dross

Jozef Szlufcik

Christophe Allebé

Frédéric Dross

Dries Els Victor Van Gestel

Guido Agostinelli

Patrick Choulat

A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

Photovoltaic cells having metal wrap through and improved passivation

A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

Method for the production of thin layer of silicon by utilization of mismatch in coefficient of thermal expansion between screen printed metal layer and silicon mother substrate

Method for the production of thin substrates

A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed.

Method for manufacturing a crystalline silicon layer

Growing community of inventors

Oud-Heverlee, Belgium

Guy Beaucarne