International Superconductivity Technology Center

Gustavo Adolfo Alvarez

Youichi Enomoto

Naoki Koshizuka

Jian-Guo Wen

Furen Wang

Shoji Tanaka

Tadashi Utagawa

An oxide superconducting element is formed on a substrate by a layered structure formed of oxide superconducting thin-film and a non-superconducting thin-film layers. The element is a superconducting regular current interval voltage step element. The current-voltage characteristic curve in a magnetic field has a voltage step being generated at regular bias current intervals. The layered structure is formed by depositing alternately M&prime;Ba Cu O (M&prime; is one or a combination of more than two elements of Nd, Sm and Eu) and M&Prime;Ba Cu O thin-films (M&Prime; is either Pr or Sc, or a combination of the two elements).

Superconducting regular current interval voltage step element and superconducting device

An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

Oxide superconductor multilayered film and oxide superconductor

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Tokyo, Japan

Gustavo Adolfo Alvarez