Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Guseul Baek

Toshikazu Fukuda

According to one embodiment, there is provided a semiconductor storage device including a bit cell, a dummy cell, a word line, a dummy word line, a word line driver, a dummy word line driver, a first modulation circuit, and a second modulation circuit. The word line is electrically connected to the bit cell. The dummy word line is electrically connected to the dummy cell. The word line driver is electrically connected to the word line. The dummy word line driver is electrically connected to the dummy word line. The first modulation circuit is electrically connected to the word line driver. The second modulation circuit is electrically connected to the dummy word line driver.

Semiconductor storage device

A semiconductor memory device includes a cell array including memory cells. A potential generation circuit applies a first potential to the memory cells. A control signal output circuit outputs a control signal based on the first potential. A pulse width adjustment circuit adjusts a pulse width of a word line voltage of the cell array based on the control signal. An amplitude of a voltage applied to bit lines connected to the memory cells is controlled with the pulse width.

Growing community of inventors

Kanagawa, Japan

Guseul Baek