Qualcomm Incorporated

Gururaj Shamanna

Priyankar Mathuria

Rakesh Kumar Sinha

Vrc Krishna Teja Kunisetty

In an aspect of the disclosure, a method and an apparatus are provided. The apparatus may be a memory. The memory may include a first memory portion configured to store a first bit and generate a first data bit output. The first data bit output may be a function of the first bit when a first read enable is active. The memory may also include a second memory portion configured to store a second bit and generate a second data bit output. The second data bit output may be a function of the second bit when a second read enable is active. The memory may include a switch configured to select between the first and second bits for a read operation based on the first and second data bit outputs.

Efficient memory bank design

An integrated circuit (IC) is disclosed herein for accelerating memory access with an output latch. In an example aspect, the output latch includes a data storage unit, first circuitry, and second circuitry. The data storage unit includes a first input node configured to receive a first input voltage, a second input node configured to receive a second input voltage, a first output node configured to provide a first output voltage, and a second output node configured to provide a second output voltage. The first circuitry is configured to accelerate a voltage level transition of the first output voltage at the first output node responsive to the first input voltage at the first input node. The second circuitry is configured to accelerate a voltage level transition of the second output voltage at the second output node responsive to the second input voltage at the second input node.

Growing community of inventors

Bengaluru, India

Gururaj Shamanna