Stats Chippac Pte. Ltd.

St Assembly Test Services Inc.

Jcet Semiconductor (shaoxing) Co., Ltd.

Guruprasad G Badakere

Zigmund Ramirez Camacho

Lionel Chien Hui Tay

Il Kwon Shim

Jian Jun Li

A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

Semiconductor device and method of forming wafer level ground plane and power ring

A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive through hole vias (THV) are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over the semiconductor die. A portion of the insulating layer is removed to expose the first conductive layer and a thermal dissipation region of semiconductor die. A thermal via is formed through the insulating layer to the first conductive layer. A thermally conductive layer is formed over the thermal dissipation region and thermal via. A thermal conduction path is formed from the thermal dissipation region through the thermally conductive layer, thermal via, first conductive layer, conductive via, and second conductive layer. The thermal conduction path terminates in an external thermal ground point. The thermally conductive layer provides shielding for electromagnetic interference.

Semiconductor device and method of providing a thermal dissipation path through RDL and conductive via

A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Through hole vias (THV) are formed in the die extension region. A conductive plane or ring is formed in a center area on the active surface of the semiconductor die. The conductive plane or ring is coupled to a first contact pad for providing a first power supply potential to the active circuits. The conductive plane or ring is electrically connected to a first THV. A conductive ring is formed partially around a perimeter of the conduction plane or ring. The conductive ring is coupled to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

Semiconductor wafer level interconnect package utilizing conductive ring and pad for separate voltage supplies and method of making the same

An integrated circuit package is provided. A substrate is provided having solder openings therein and a conductive layer thereon. The conductive layer is processed to form a plurality of pads over the solder openings in the substrate. A mask is formed over the plurality of pads and openings formed in the mask over at least two pads of the plurality of pads. An integrated circuit die is bonded over the substrate using a conductive adhesive where the conductive adhesive is placed in the openings in conductive contact with at least two pads of the plurality of pads.

Integrated circuit package

An integrated circuit package, and manufacturing method therefor, is provided. A substrate is provided having solder openings therein and a conductive layer thereon. The conductive layer is processed to form a plurality of pads over the solder openings in the substrate. A mask is formed over the plurality of pads and openings formed in the mask over at least two pads of the plurality of pads. An integrated circuit die is bonded over the substrate using a conductive adhesive where the conductive adhesive is placed in the openings in conductive contact with at least two pads of the plurality of pads.

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Singapore, Singapore

Guruprasad G Badakere