Wisconsin Alumni Research Foundation

Guoxuan Qin

Zhenqiang Ma

Guogong Wang

Namki Cho

The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.

High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits

A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.

Growing community of inventors

Tianjin, China

Guoxuan Qin