Southern University of Science and Technology

Arashi Vision Inc.

Guoxing Zhang

Guobiao Zhang

Wang Zhang

Hongyu Yu

Yuejin Guo

Shengming Zhou

Guangzhao Liu

Mingtao Hu

Wen Su

Yida Li

Xiaodong Xiang

Mei Shen

Charging case

A three-dimensional (3-D) module with integrated passive components includes a plurality of vertically stacked sub-modules. Each sub-module comprises a device level comprising a high-k dielectric (e.g. ceramic) material and an interconnect level comprising a low-k dielectric (e.g. organic) material. The passive components in the device level are fired integrally, whereas the device level and the interconnect level are fired independently.

Three-dimensional module with integrated passive components

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)

Growing community of inventors

Shenzhen, China

Guoxing Zhang