Chengdu Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Guowei Su

Yu Zhang

Xiaodong Yang

Feng Bai

Fei Fei Li

Yan Nan Hu

Chiehhsing Chung

Zubin Lv

Hongguang Yuan

Yong Zhou

Yongyi Fu

Cheng Zhou

Nan Du

Sa Liu

Kechao Song

Zhengping Xu

Suoping Peng

Kaihao Chen

Saijun Sun

Zhilong Yuan

Hexiong Li

Chunpeng Zhang

Chengshih Huang

Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a display region and at least one hole region located in the display region, the hole region includes a function hole and a partition region surrounding the function hole, the partition region is provided with at least one partition dam surrounding the function hole; the partition dam includes a first partition layer disposed on a base substrate and a second partition layer disposed on a side of the first partition layer away from the base substrate, at least one partition layer includes a second sub-layer and a third sub-layer disposed on a side of the second sub-layer away from the base substrate, the third sub-layer has a protrusion with respect to a sidewall of the second sub-layer, and the protrusion and the sidewall of the second sub-layer form an inwardly recessed structure.

Display substrate and preparation method thereof, and display apparatus each including partition region provides with at least one partition dam surrounding function hole

The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.

Method and apparatus for measuring a size of a crystal grain, and method for fabricating a poly-silicon thin film

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Beijing, China

Guowei Su