Beijing Naura Microelectronics Equipment Co., Ltd.

Beijing Nmc Co., Ltd.

Guoqing Qiu

Qiang Li

Chao Zhang

Peng Chen

Xu Bin Liu

Yujie Yang

Peijun Ding

Mengxin Zhao

Hougong Wang

Bo Geng

Xuewei Wu

Feng Lv

Yuchun Deng

Zhimin Bai

Yangchao Li

The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Feeding structure, upper electrode assembly, and physical vapor deposition chamber and device

Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a&#x3b8;n+b(cos &#x3b8;)m+c(tan &#x3b8;)k+d, 0&#x3c;=n&#x3c;=2, 0&#x3c;=m&#x3c;=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.

Magnetron and magnetron sputtering device

Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.

Magnetron source, magnetron sputtering apparatus and magnetron sputtering method

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Beijing, China

Guoqing Qiu