University of California

National Applied Research Laboratories

Guoqiang Yu

Kang L Wang

Pedram Khalili Amiri

Kang-Lung Wang

Wen-Kuan Yeh

Yann-Wen Lan

Qiming Shao

Pramey Upadhyaya

The present invention relates to an inductive spin-orbit torque device and the method for fabricating the same. The method comprises steps of depositing a two-dimensional thin film using chemical vapor deposition (CVD) and sputtering a ferromagnetic material on the thin film. The crystal structure of the two-dimensional thin film includes at least one lattice plane arranged asymmetrically. The thickness of the two-dimensional thin film includes at least one unit-cell layer. The sum of the at least one unit-cell layer is an odd number. By using the vertical magnetic torque generated by the two-dimensional thin film and the miniaturization in thickness, the device size and the fabrication costs may be reduced.

Inductive spin-orbit torque device and method for fabricating the same

A basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry is provided that produces a new spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. More complex structures can also be produced incorporating the basic structure of a ferromagnetic layer with a heavy non-magnetic metal layer having strong spin-orbit coupling on one side, and an insulator layer on the other side with a structural mirror asymmetry along the in-plane direction. The lateral structural asymmetry and new spin-orbit torque, in effect, replaces the role of the external in-plane magnetic field. The direction of switching is determined by the combination of the direction of applied current and the direction of symmetry breaking in the device.

Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques

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Los Angeles, CA, United States of America

Guoqiang Yu