The South China University of Technology

Guangzhou Aifo Light Communication Technology Company Ltd.

Tongji University

Guoqiang Li

Wenliang Wang

Fangliang Gao

Lei Wen

Jingling Li

Deqi Kong

Shuguang Zhang

Xinyan Yi

Sheng Chen

Yuan Li

Zhiheng Xing

Yuhui Yang

Hongsheng Jiang

Zhengliang Lin

Zichen Zhang

Feifei Sun

Zhikun Liu

Baiyu Su

Yunfang Guan

Wenjin Mai

Yulin Zheng

Lijun Wan

Tianji Li

Dingbo Chen

Xiaokang Guo

Jixing Chai

Han Hu

Linhao Li

Zhenzhu Xu

Yuhan Zhu

Xiaochan Li

Kaibin Xu

Zhipeng Chen

A preparation method for growing a germanium sulfide (GeS) single-crystal thin film on a SiOsubstrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiOsubstrate or a SiOglass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeSsingle-crystal thin film on the SiOsubstrate. The preparation method can grow GeSsingle crystals on the SiOsubstrate. The GeSsingle crystals have a high crystalline quality and a small surface roughness.

Preparation method for growing germanium sulfide (GeS) single-crystal thin film on SiOsubstrate

The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlGaN layer, and an undoped N-polar plane AlGaN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNpassivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.

Solar-blind AlGaN ultraviolet photodetector and preparation method thereof

A method for preparing a hybrid filter on a chip with IPD and FBAR, includes: preparing a leakage isolation layer on a supporting substrate by deposition; obtaining an inductor layer on the leakage isolation layer, leaving a window at a bottom of a groove surrounding a cross section of a TGV inductor stack on a mask, and patterning an inductor metal simultaneously; forming a first insulating layer on the inductor metal, and forming lead through holes by photolithography; repeating steps and alternately to obtain a three-layer stacked TGV inductor; depositing a second insulating layer on the TGV inductor; depositing two capacitor layers on the second insulating layer, and depositing a third insulating layer between the two capacitor layers to form an MIM capacitor; and preparing a BAW resonator on the MIM capacitor, and connecting the TGV inductor, the MIM capacitor and the BAW resonator through the lead through holes.

Hybrid filter on chip with integrated passive device (IPD) and film bulk acoustic resonator (FBAR)

An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a SiNpassivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and preparation method and application thereof

The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNpassivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNpassivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.

GaN/two-dimensional AlN heterojunction rectifier on silicon substrate and preparation method therefor

A PECVD apparatus includes a transfer chamber, a load lock, a cleaning chamber, a spin-drying chamber, a deposition chamber, and an unload lock; wherein the load lock, the cleaning chamber, the spin-drying chamber, the deposition chamber, and the unload lock are successively spirally arranged on a side wall of the transfer chamber; and a spiral conveyor device is arranged in the transfer chamber, wherein the spiral conveyor device includes a conveyor rod, a spiral drive mechanism, and a plurality of conveyor assemblies; wherein the conveyor rod is vertically arranged in the transfer chamber, and the plurality of conveyor assemblies are spirally arranged on the conveyor rod, and wherein the spiral drive mechanism is configured to drive the conveyor rod to undergo a spiral ascending or descending movement.

PECVD apparatus

A chip bonding apparatus and a securing assembly therefor are disclosed. The securing assembly includes a securing bracket, a sliding bracket, and a slide. A first open slot is arranged in the securing bracket, wherein the sliding bracket is slidably mounted on the first open slot, a snap-fitting portion is arranged on a side portion of the sliding bracket, and at least one catch slot that is engageable with the snap-fitting portion to secure the sliding bracket is arranged in the securing bracket. A second open slot is arranged in the sliding bracket, wherein a slideway is arranged in each of two side walls of the second open slot, and the slide is inserted into the slideway and hence mounted in the second open slot.

Chip bonding apparatus and securing assembly therefor

A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer () and an AlGabarrier layer (), and is arranged from top to bottom; the electrodes include a gate electrode (), a source electrode (), a drain electrode () and a field plate electrode (), wherein the field plate electrode () and the gate electrode () are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode () extends to a region beyond the epitaxial layer and is connected with the gate electrode () to form the sandwich structure, and the source electrode () and the drain electrode () are respectively located at two ends of the epitaxial layer.

GaN-HEMT device with sandwich structure and method for preparing the same

A filter package structure includes: a die substrate, a substrate, a solder resist layer, a package layer, and a conductive structure disposed; wherein the solder resist layer is disposed on the substrate, and a plurality of channels are formed in the solder resist layer, each of the channels being provided with a solder; the conductive structure includes a seal wall and a support electrode, the seal wall and one terminal of the support electrode being connected to the substrate via the solder; and the die substrate is provided with a filter, wherein the seal wall is disposed around a periphery of the filter, the die substrate, the substrate and the seal wall enclose to define an enclosed chamber, the support electrode is disposed in the enclosed chamber, and the package layer is disposed on a periphery, far away from the enclosed chamber, of the die substrate.

Filter package structure and method for preparing same

An InN nanorod epitaxial wafer grown on an aluminum foil substrate () sequentially comprises the aluminum foil substrate (), an amorphous aluminum oxide layer (), an AlN layer () and an InN nanorod layer, () from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700&#xb0; C., the pressure of a reaction chamber is 4.0-10.0&#xd7;10Torr and the beam ratio of V/III is 20-40.

Indium nitride nanopillar epitaxial wafer grown on aluminum foil substrate and preparation method of indium nitride nanopillar epitaxial wafer

The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce Hto open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.

Two-dimensional AIN material and its preparation method and application

The present invention discloses a method for preparing a GaN rectifier suitable for operating at an alternating current frequency of 35 GHz: sequentially growing, on a silicon substrate, an N-polar GaN buffer layer, a carbon doped semi-insulated N-polar GaN layer, a non-doped N-polar AlGaN layer, a non-doped N-polar GaN layer and a non-doped N-polar InGaN thin film to obtain a rectifier epitaxial wafer; preparing a pattern groove for a schottky contact electrode on the GaN rectifier epitaxial wafer, and depositing the schottky contact electrode in the groove; preparing a pattern for an ohmic contact electrode, and depositing a device ohmic contact electrode on the surface of the epitaxial wafer; subsequently, depositing a silicon nitride passivation layer at a part where there is no electrode on the surface of the epitaxial wafer, and preparing a surface electrode area; and finally, performing mesa isolation treatment on the GaN rectifier epitaxial wafer. The present invention realizes the preparation of a high-frequency GaN rectifier, and improves the performance stability of a rectifier device operating at a high power.

Gan rectifier suitable for operating under 35GHZ alternating-current frequency, and preparation method therefor

The present invention discloses a vertical structure nonpolar LED chip on a lithium gallate substrate and a preparation method therefor. According to the method, LED epitaxial wafers are grown on a lithium gallate substrate, wherein the LED epitaxial wafers comprise a GaN buffer layer grown on the lithium gallate substrate, a non-doped GaN layer on the GaN buffer layer, an n-type doped GaN thin film on the non-doped GaN layer, an InGaN/GaN quantum well on the n-type doped GaN thin film and a p-type doped GaN thin film on the InGaN/GaN quantum well. Then, electrode patterns are prepared on the surfaces of the LED epitaxial wafers by the steps of spin coating, photoetching, developing and cleaning, and an electrode metal is sequentially deposited on the upper surfaces of the epitaxial wafers. Then, the LED epitaxial wafers are transferred to a copper substrate. Then, the original lithium gallate substrate is lifted off by an HCl solution, a silicon dioxide protective layer is prepared, and the corresponding part of an electrode is exposed. Then, SiOon the electrode is etched away, and a complete vertical structure LED chip is formed.

Vertical structure nonpolar LED chip on lithium gallate substrate and preparation method therefor

Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InGaAs buffer layer growth; (5) first InGaAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InGaAs buffer layer growth; (9) second InGaAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate

The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer and an InGaAs epitaxial film, arranged sequentially, wherein the low temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 350&#x2dc;380&#xb0; C.; the high temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 500&#x2dc;540&#xb0; C., and the sum of the thickness of the low temperature InGaAs buffer layer and the thickness of the high temperature InGaAs buffer layer is 10&#x2dc;20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

Growing community of inventors

Guangzhou, China

Guoqiang Li