Csmc Technologies Fab2 Co., Ltd.

Csmc Technologies Fab1 Co., Ltd.

Guoping Zhou

Changfeng Xia

Xinwei Zhang

Yonggang Hu

Dan Dai

Jiale Su

A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.

MEMS microphone and preparation method therefor

A Micro-Electro-Mechanical System (MEMS) device includes a substrate, and a first sacrificial layer, a first conductive film, a second sacrificial layer, and a second conductive film successively laminated on the substrate, the second sacrificial layer being provided with a cavity; and further includes an amplitude-limiting layer provided with a first through hole and an isolation layer provided with a second through hole. The amplitude-limiting layer is located between the first conductive film and the first sacrificial layer and the isolation layer is located between the amplitude-limiting layer and the first conductive film, and/or the amplitude-limiting layer is located on the second conductive film and the isolation layer is located between the amplitude-limiting layer and the second conductive film. The amplitude-limiting layer extends to a projection region of an opening of the cavity and is in a suspended state.

Micro-Electro-Mechanical System device

A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiOon the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.

Manufacturing method of MEMS chip

An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel () and a support beam () on a front surface of a substrate (); forming a first epitaxial layer () on the front surface of the substrate () to seal the shallow channel (); forming a suspended mesh structure () below the first epitaxial layer (); and forming a deep channel () at a position on a back surface of the substrate () corresponding to the shallow channel (), so that the shallow channel () is in communication with the deep channel (). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

MEMS-based method for manufacturing sensor

A MEMS chip () includes a silicon substrate layer (), a first oxidation layer () and a first thin film layer (). The silicon substrate layer includes a front surface () for a MEMS process and a rear surface (), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

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Guoping Zhou