Kla Tencor Corporation

Kla-tencor Technologies Corporation

Applied Materials, Inc.

Kla Corporation

3i Systems Corporation

Kla-technologies Corporation

Guoheng Zhao

Mehdi Vaez-Iravani

Stanley E Stokowski

Mehrdad Nikoonahad

Todd J Egan

Stephen Biellak

Daniel Ivanov Kavaldjiev

Sheng Liu

Ady Levy

Christian Wolters

Daniel C Wack

Anatoly Romanovsky

Bret Whiteside

Jenn-Kuen Leong

Ivan Maleev

Dirk Woll

Shing Lee

Lena Nicolaides

Anatoly Fabrikant

Scott Allen Young

Yury Yuditsky

Johan De Greeve

Karel Van Gils

Maarten Van Der Burgt

Samuel S H Ngai

Ben-Ming Benjamin Tsai

Jijen Vazhaeparambil

Yung-Ho Alex Chuang

John Fielden

Christopher Dennis Bencher

Robert Jan Visser

Andrei V Shchegrov

Andrew V Hill

Alex Salnik

Rodney C Smedt

Kenneth P Gross

Michael D Kirk

Edward W Budiarto

Byung Sung Kwak

Kurt Lehman

Donald Pettibone

Dinesh Kabra

Alexander Belyaev

Andy Hill

Jeremy Nesbitt

Yeishin Tung

George H Zapalac, Jr

Paul Doyle

Gangadhar Banappanavar

Azmi Kadkly

J K Leong

Ben Tsai

Neeraj Khanna

Chong Shen

Shifang Li

Bin-Ming Benjamin Tsai

Noah Bareket

David Lee Brown

Mehran Nasser-Ghodsi

Gary Janik

Ian R Smith

David W Shortt

Isabella Talley Lewis

Kris Bhaskar

Mohan Mahadevan

Kyle Tantiwong

Zhiwei Xu

Sergio Edelstein

Youxian Wen

Anantha R Sethuraman

Hidong Kwak

Juergen Reich

Rachit Sharma

Nanchang Zhu

Jehn-Huar Chern

Stan Stokowski

Walter H Johnson, Iii

Prashant Aji

Rex Runyon

Paul Horn

Avishek Ghosh

Venkatakaushik Voleti

Zheng Yan

Guowu Zheng

Wolfgang Vollrath

Devis Contarato

Wayne Chen

Howard Dando

Bo Li

Sam Shamouilian

Niranjan Ramchandra Khasgiwale

Sankesha Bhoyar

J Rex Runyon

Geordie Zapalac

Samuel Ngai

Andreas Schulze

Avijit K Ray-Chaudhuri

Michael Gasvoda

Howard W Dando

Marco Guevremont

An optical inspection system includes one or more single-material gratings to convert the polarization of light scattered from a target from an elliptical polarization that varies spatially across a collection pupil to a linear polarization that is uniformly oriented across the collection pupil. The one or more single-material gratings have phase retardation that varies spatially across the collection pupil in accordance with the elliptical polarization. The optical inspection system also includes a linear polarizer to filter out the linearly polarized light.

Single-material waveplates for pupil polarization filtering

An optical inspection system includes one or more gratings to convert the polarization of light scattered from a target from an elliptical polarization that varies spatially across a collection pupil to a linear polarization that is uniformly oriented across the collection pupil. The one or more gratings have phase retardation that varies spatially across the collection pupil in accordance with the elliptical polarization. The one or more gratings include at least one grating on a reflective substrate. The optical inspection system also includes a linear polarizer to filter out the linearly polarized light.

Reflective waveplates for pupil polarization filtering

Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.

Image based metrology of surface deformations

An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

In-line monitoring of OLED layer thickness and dopant concentration

Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.

Image-based in-situ process monitoring

Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Methods and systems to measure properties of products on a moving blade in electronic device manufacturing machines

Examples disclosed herein generally relate to an apparatus and method for detecting particles in a fluid. A system for imaging a particle includes an imaging device. The imaging device has a lens and a detector. A laser source is configured to emit a laser beam. The detector is configured to accumulate an intensity of an accumulated light that passes through the lens. The accumulated light is scattered by the particle. The particle passes through the laser beam over a given period.

In-situ, real-time detection of particulate defects in a fluid

Examples disclosed herein generally relate to systems and methods for detecting the size of a particle in a fluid. In one example, a system for imaging a particle includes a first imaging device. The first imaging device includes a lens and a digital detector. The system further includes a laser source. He laser source is configured to emit a first laser beam and a second laser beam. The digital detector is configured to accumulate a metric of an intensity of an accumulated light that passes through the lens. The accumulated light is scattered from the particle. The accumulated light includes light from the first laser beam and the second laser beam.

Method and apparatus for detection of particle size in a fluid

Disclosed is apparatus for inspecting a sample. The apparatus includes illumination optics for simultaneously directing a plurality of incident beams at a plurality of azimuth angles towards a sample and collection optics for directing a plurality of field portions of output light from two or more of the plurality of angles towards two or more corresponding sensors. The two or more sensors are arranged for receiving the field portions corresponding to two or more angles and generating two or more corresponding images. The apparatus further comprises a processor for analyzing the two or more images to detect defects on the sample.

Simultaneous multi-directional laser wafer inspection

For three-dimensional topography measurement of a surface of an object patterned illumination is projected on the surface through an objective. A relative movement between the object and the objective is carried out, and plural images of the surface are recorded through the objective by a detector. The direction of the relative movement includes an oblique angle with an optical axis of the objective. Height information for a given position on the surface is derived from a variation of the intensity recorded from the respective position. Also, patterned illumination and uniform illumination may be projected alternatingly on the surface, while images of the surface are recorded during a relative movement of the object and the objective along an optical axis of the objective. Uniform illumination is used for obtaining height information for specular structures on the surface, patterned illumination is used for obtaining height information on other parts of the surface.

Method and system for optical three dimensional topography measurement

Implementations disclosed describe a system comprising a first optical device to receive an input beam of light, the input beam having a plurality of spectral components of light, and cause the input beam to disperse into a plurality of spectral beams, wherein each of the plurality of spectral beams corresponds to one of the plurality of spectral components and propagates along a spatial path that is different from spatial paths of other spectral beams, and a second optical device to collect a portion of each of the spectral beams, wherein the collected portion depends on the spatial path of the respective spectral beam, and form an output beam of light from the collected portion of each of the spectral beams, wherein a spectral profile of the output beam is different from a spectral profile of the input beam of light.

Spectrum shaping devices and techniques for optical characterization applications

An imaging reflectometer includes a source module configured to generate a plurality of input beams at different nominal wavelengths. An illumination pupil having a first numerical aperture (NA) is arranged so that each of the plurality of input beams passes through the illumination pupil. A large field lens is configured to receive at least a portion of each of the plurality of input beams and provide substantially telecentric illumination over a sample being imaged. The large field lens is also configured to receive reflected portions of the substantially telecentric illumination reflected from the sample. The reflected portions pass through an imaging pupil having a second NA that is lower than the first NA and are received by an imaging sensor module that generates image information.

Imaging reflectometer

Methods for performing imaging reflectometry measurements include illuminating a measurement area on a sample using an input beam having a first peak wavelength, and obtaining multiple images of the measurement area using portions of the input beam reflected from the sample. A reflectance intensity value is determined for each of a plurality of pixels in each of the images. A parameter associated with the particular structure is determined using the reflectance intensity value.

High sensitivity image-based reflectometry

Growing community of inventors

Palo Alto, CA, United States of America

Guoheng Zhao