United Microelectronics Corp.

Guohai Zhang

Ching Hwa Tey

Ji Feng

Yunfei Li

Guoan Du

Yuan Zhou

Xian Feng Du

Yi Liu

Jui-Chun Kuo

Kay-Ming Lee

Yonghui Gao

Lu-Ying Du

Jingling Wang

A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.

Transistor structure with air gap and method of fabricating the same

A semiconductor memory device includes a substrate having a first interlayer dielectric layer thereon; a lower metal interconnect layer in the first interlayer dielectric layer; a conductive via disposed on the lower metal interconnect layer; a bottom electrode disposed on the conductive via; a dielectric data storage layer having variable resistance disposed on the bottom electrode; a top electrode disposed on the dielectric data storage layer; and a protective layer covering sidewalls of the top electrode, the dielectric data storage layer, and the bottom electrode. The protective layer includes an annular, upwardly protruding portion around a perimeter of the top electrode.

Semiconductor memory device and fabrication method thereof

A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.

Method of manufacturing semiconductor device

A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.

Method of forming semiconductor device

A data analysis method for an integrated circuit process is described, for analyzing the results of at least an in-line quality test, a product test and a yield test done to the products of the IC process. The products are divided into a normal group and an abnormal group based on the result of the in-line quality test, and are divided into a qualified group and an unqualified group based on the result of the yield test. A categorization step is performed to define the intersection of the unqualified group and the normal group as a first problematic group and to define the intersection of the unqualified group and the abnormal group as a second problematic group. By analyzing one or both of the two problematic groups, the major yield killer can be identified so that process modification can be made accordingly to improve the yield.

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Singapore, Singapore

Guohai Zhang