Wisconsin Alumni Research Foundation

Guogong Wang

Zhenqiang Ma

Hao-Chih Yuan

Max G Lagally

Mark A Eriksson

Paul Gregory Evans

Guoxuan Qin

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Front and backside processed thin film electronic devices

This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.

Method for fabricating high-speed thin-film transistors

A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.

High-power common-base amplifier employing current source output bias

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Growing community of inventors

Madison, WI, United States of America

Guogong Wang