Beijing Naura Microelectronics Equipment Co., Ltd.

Guodong Bian

Bing Li

Peng Chen

Qing Chang

Peijun Ding

Mengxin Zhao

Qing She

Kui Xu

Keke Zhao

Liren Han

Lixin Pei

A shield cooling assembly includes an adapter configured to fix a shield in the chamber. The adapter includes a first surface and a second surface facing an outer side surface of the shield and a bottom surface of a bottom wall of the shield, respectively. A predetermined gap is provided between the first surface and the outer side surface of the shield. The second surface is in contact with the bottom surface of the bottom wall of the shield. The adapter is provided with a cooling channel for transmitting a cooling medium to cool the shield.

Shield cooling assembly, reaction chamber and semiconductor processing apparatus

The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a liner, and the liner includes an integrally formed body member and a cover member. The cover member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover member and the body member and may be configured to cool the cover member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.

Sputtering reaction chamber and process assembly of sputtering reaction chamber

A precleaning chamber () and a plasma processing apparatus, comprising a cavity () and a dielectric window (') disposed at the top of the cavity (), a base () and a process assembly () surrounding the base () are disposed in the precleaning chamber (), and the base (), the process assembly () and the dielectric window (&#x2032;) together form a process sub-cavity () above the base (); and a space of the cavity () located below the base () is used as a loading/unloading sub-cavity (), the precleaning chamber () further comprises a gas is device (), the gas inlet device () comprises a gas inlet (), and the gas inlet () is configured to directly transport a process gas into the process sub-cavity () from above the process assembly (). The precleaning chamber () not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.

Precleaning chamber and plasma processing apparatus

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Beijing, China

Guodong Bian