Stmicroelectronics (shenzhen) R&d Co. Ltd.

Kuang-chi Innovative Technology Ltd.

Kuang-chi Institute of Advanced Technology

Guo Zhong

Mei Yang

Ruopeng Liu

Lin Luan

Zhiya Zhao

Chaofeng Kou

Jinjin Wang

Xin Xie

Jincai Ye

The present invention provides an artificial microstructure employed in an artificial electromagnetic material. The artificial microstructure includes a first segment, a second segment, and a third segment. The first segment is parallel to the second segment, and the third segment is connected between the first segment and the second segment. The artificial electromagnetic material has a special electromagnetic effect. The artificial electromagnetic material can be applied to various electromagnetic application systems instead of the typical electromagnetic material.

Artificial microstructure and artificial electromagnetic material using the same

A power transistor for use in an audio application is laid out to minimize hot spots. Hot spots are created by non-uniform power dissipation or overly concentrated current densities. The source and drain pads are disposed relative to each other to facilitate uniform power dissipation. Interleaving metal fingers and upper metal layers are connected directly to lower metal layers in the absence of vias to improve current density distribution. This layout improves some fail detection tests by 17%.

Layout and pad floor plan of power transistor for good performance of SPU and STOG

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Shenzhen, China

Guo Zhong