Northern Telecom Limited

Guo P Li

Toshi Makino

Rongqing Hui

Toshihiko Makino

Frank Reginald Shepherd

Agnes Margittai

Joannie Marks

Trevor Jones

Weiping Huang

Andrew M Sarangan

A thin film resistor for optoelectronic integrated circuits is described. A stable low resistance, thin film resistor comprising a bilayer of platinum on titanium is provided. Advantageously, the resistive layer is protected by a layer of dielectric, e.g. silicon dioxide or silicon nitride to reduce degradation from humidity an under high temperature operation at 300.degree. C. or more. The resistor may be formed on various substrates, including silicon dioxide, silicon nitride and semiconductor substrates. Applications for optoelectronic integrated circuits include integrated resistive heaters for wavelength fine tuning of a semiconductor laser array.

Thin film resistor for optoelectronic integrated circuits

A multi-wavelength laser array having a plurality of gain-coupled distributed feedback ridge waveguide lasers. The operational wavelength of each laser is established by selecting a width of the ridge waveguide in the range 1.6 .mu.m to 5.2 .mu.m. Fine tuning of each central wavelength is achieved by thermal power to selected waveguides via Titanium thin film resistors integrated into the laser array. A wavelength range of 9 nm is demonstrated utilizing a sixteen element array.

Multi-wavelength gain-coupled distributed feedback laser array with fine

A system for generating an ultra short optical pulse by pumping a semiconductor signal laser with an optical pulse from a semiconductor probe laser. The signal laser has dual segments each operated under different d.c. injection current levels. The probe laser is modulated with a pulsed input and the optical output thereof is coupled via optical means to the signal laser so as to Q-switch the latter. Optical pulses in the 65 ps range result.

Optical Q-switching to generate ultra short pulses in diode lasers

A gain-coupled distributed feedback (DFB) laser or amplifier structure having a gain-coupling grating in the form of grooves periodically etched through strained, multi-quantum wells. The etched grooves are regrown with buffer material having a bandgap selected to compensate for index-coupling aid to block carrier leakage. The low carrier leakage reduces non-radiative recombination which in turn increases quantum efficiency.

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Ottawa, Canada

Guo P Li