Samsung Electronics Co., Ltd.

Gunwook Yoon

Doohee Hwang

Myunghun Woo

Jooheon Kang

Yukio Hayakawa

A vertical variable resistance memory device includes gate electrodes and a pillar structure. The gate electrodes are spaced apart from one another on a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate. The pillar structure extends in the vertical direction through the gate electrodes on the substrate. The pillar structure includes a vertical gate electrode extending in the vertical direction, a variable resistance pattern disposed on a sidewall of the vertical gate electrode, and a channel disposed on an outer sidewall of the variable resistance pattern. The channel and the vertical gate electrode contact each other.

Growing community of inventors

Suwon-si, South Korea

Gunwook Yoon