Universiteit Gent

Imec Vzw

Imec

Brolis Sensor Technology, Uab

Huawei Technologies Co., Limited

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Melexis Technologies Nv

Genexis B.v.

Brolis Sensor Technology, Uab Et Al.

Centre National De La Recherche Scientifique

Alcatel Lucent

Royal Melbourne Institute of Technology

Thales Sa

Günther Roelkens

Dries Van Thourhout

Roeland Baets

Augustinas Vizbaras

Kristijonas Vizbaras

Ieva Simonyte

Jonathan Schrauwen

Laurent Grenouillet

Jean-Marc Fedeli

Joris Van Campenhout

Roel Baets

Wim Bogaerts

Danaë Delbeke

Geert Van Steenberge

Geert Morthier

Paolo Cardile

Dirk Taillaert

Ananth Subramanian

Gerard Nicolaas Van Den Hoven

Philippe Regreny

Pedro Rojo-Romeo

Andreas De Groote

Regis Orobtchouk

Eva Ryckeboer

Diedrik Vermeulen

Wouter Leten

Stijn Scheerlinck

Yannick De Koninck

Ieva Simonytė

Joris Roels

Xiaoning Jia

Diederik Vermeulen

Shahram Keyvaninia

Liu Liu

Hongtao Chen

Diedrick Vermeulen

Francis Poingt

Guilhem De Valicourt

Marco Lamponi

Guang-Hua Duan

Arnan Mitchell

Xiaomin Nie

A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/ IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level

A gas sensor device () is configured to measure a predetermined gas of interest and comprises an enclosure () comprising a semiconductor substrate () and defining a first cavity (), an optically transmissive second closed cavity () and a third cavity (). The second cavity () is interposed between the first and third cavities (). The first cavity () comprises an inlet port () for receiving a gas under test, an outlet port () for venting the gas under test. The first cavity () also comprises an optical source () and a measurement sensor (). The second cavity () is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (), and the third cavity () comprises a reference measurement sensor () disposed therein.

Gas sensor device and method of manufacturing the same

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Tunable hybrid III-V/IV laser sensor system-on-a-chip for real-time monitoring of a blood constituent concentration level

The disclosure is related to a method for producing at least one semiconductor component coupled to a target substrate, where a coupon comprising one or more constituent layers of the at least one semiconductor component is transferred to the target substrate by transfer printing. The coupon is embedded in a portion of a support layer thereby forming an enlarged coupon provided with solid alignment markers on the underside thereof. Corresponding hollow alignment markers exist on the location of the target substrate where the coupon is to be placed. The alignment markers engage to thereby align the coupon to the target location. The disclosure is equally related to a device assembly obtainable by the method.

Coupling a semiconductor component to a target substrate by transfer printing

An on-chip broadband radiation source, and methods for its manufacture such that a photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.

On-chip broadband light source

An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.

Integrated spectrometers with single pixel detector

Disclosed are optical devices for coupling radiation between an optical waveguide and an external medium. In one embodiment, an optical device is disclosed comprising a semiconductor die comprising an integrated optical waveguide core and an overlying optical waveguide comprising a waveguide taper and a waveguide facet. The overlying optical waveguide at least partially overlies the integrated optical waveguide core, and the waveguide facet is between about 1 &#x3bc;m and 200 &#x3bc;m from an edge of the semiconductor die. In another embodiment, a method is disclosed comprising providing a substrate comprising an integrated semiconductor waveguide and forming on the substrate an overlying waveguide comprising a waveguide taper and a waveguide facet. The overlying waveguide at least partially overlies the integrated semiconductor waveguide. The method further includes cutting the substrate about 1 &#x3bc;m and 200 &#x3bc;m from the waveguide facet.

Coupling methods and systems using a taper

A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

Method for realizing heterogeneous III-V silicon photonic integrated circuits

The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component. In one aspect, a method comprises: providing a photonic integrated circuit comprising at least one integrated optical waveguide, the photonic integrated circuit having a cover layer; providing at least one optical component external to the photonic integrated circuit, the at least one optical component having an optical coupling facet and configured to be optically coupled to the at least one integrated optical waveguide, thereby forming an assembly; determining a position of the optical coupling facet of the at least one optical component in the assembly; determining a position of the at least one integrated optical waveguide; designing an optical interface pattern between the optical coupling facet of the at least one optical component in the assembly and the at least one integrated optical waveguide; and writing the interface pattern in the cover layer of the photonic integrated circuit by means of a femtosecond laser, thereby forming an optical interface for optically coupling the optical coupling facet and the at least one integrated optical waveguide.

Method for optical coupling between a photonic integrated circuit and an external optical element

An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.

Integrated avalanche germanium photodetector

A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Laser light coupling into SOI CMOS photonic integrated circuit

The present invention relates to an integrated photonic device () operatively coupleable with an optical element () in a first coupling direction. The integrated photonic device () comprises an integrated photonic waveguide () and a grating coupler () that is adapted for diffracting light from the waveguide () into a second coupling direction different from the first coupling direction. The integrated photonics device also comprises a refractive element () disposed adjacent the grating coupler () and adapted to refract the light emerging from the grating coupler () in the second coupling direction into the first coupling direction.

Integrated photonics device

Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (), a photodetection structure () and a light source structure (), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers. b) bonding the structure obtained by step a) to the said waveguide structure (), the light source structure being in contact with the said waveguide structure (), c) removing the substrate () from the structure obtained by step b), d) etching the structure () obtained by step c) to define the at least one photodetector (), e) etching the structure obtained by step d) to define the at least one light source (), f) forming electrodes () on the least one photodetector () and on the least one light source ().

Method of producing a photonic device and corresponding photonic device

A photonics integrated circuit for processing radiation includes a first-dimensional grating coupler for coupling in radiation, a second two-dimensional grating coupler for coupling out radiation and a waveguide structure having two distinct waveguide arms for splitting radiation received from the first grating coupler and recombining radiation in the second grating coupler. A phase shifting means furthermore is provided for inducing an additional phase shift in at least one of the two distinct waveguide arms thereby inducing a relative phase shift of &#x3c0; between the two distinct waveguide arms so as to provide a TE/TM polarization switch for radiation between the first grating coupler and the second grating coupler.

Methods and systems for reducing polarization dependent loss

Growing community of inventors

Schellebelle, Belgium

Günther Roelkens