Koninklijke Philips Corporation N.v.

Gunter Zeitler

Cornelis Reinder Ronda

Gereon Vogtmeier

Herfried Karl Wieczorek

Dieter Wadow

Klaus Jurgen Engel

Elena Gorokhova

Olga Ovsyannikova

Herbert Schreinemachen

Olga Khristich

Ludmila Bolyasnikova

Vladimir Demidenko

The present invention is directed to a GdOS:M fluorescent ceramic material with a very short afterglow, wherein M represents at least one element selected from the group Pr, Th, Yb, Dy, Sm and/or Ho and the GdOS:M fluorescent ceramic material comprises further:

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The present invention relates to a fluorescent ceramic having the general formula GdOS doped with M, whereby M represents at least one element selected form the group Ce, Pr, Eu, Tb, Yb, Dy, Sm and/or Ho, whereby said fluorescent ceramic comprises a single phase in its volume; to a method for manufacturing a fluorescent ceramic using single-axis hot pressing; a detector for detecting ionizing radiation and to a use of said detector for detecting ionizing radiation. The method for manufacture of a fluorescent ceramic material using a single-axis hot pressing, comprises the steps: a) selecting a pigment powder of GdOS doped with M, and M represents at least one element selected from the group of Eu, Tb, Yb, Dy, Sm, Ho, Ce and/or Pr, whereby the grain size of said powder used for hot-pressing is of 1 &#x3bc;m, and said hot-pressing is carried out at&#x2014;a temperature of 1000&#xb0; C. to 1400&#xb0; C.; and/or&#x2014;a pressure of 100 Mpa to 300 MPa; air annealing at a temperature of 700&#xb0; C. to 1200&#xb0; for a time period of 0.5 hours to 30 hours.

Fluorescent ceramic and fabrication method thereof

The invention relates to an Anti-Scatter-Grid (ASG) with lamellae () that absorb incident radiation () and that produce an electrical signal proportional to the amount of absorbed radiation. The lamellae () may particularly consist of a semiconductor material in which photons produce electron-hole pairs that can be detected with the help of electrodes () on the sidewalls of the lamellae (). The amount of absorbed scattered () or primary () radiation may thus be determined in a spatially resolved way, allowing to correct the image generated by an array () of sensor units ().

Anti-scatter-grid for a radiation detector

The invention relates to an X-ray detector with an array of pixels () that are composed of a scintillation layer (), a coupling layer (), and a sensitive layer (). The coupling layer () comprises light guiding units () and shielding units (), wherein the shielding units () are disposed above electronic processing circuits () that are susceptible to disturbances by X-radiation. In an alternative embodiment, the coupling layer comprises a material like lead-glass that is transparent for light and absorbing for X-radiation. Preferably a wavelength-shifting material incorporated into the coupling layer () shifts the wavelength (&#x3bb;) of the photons generated in the scintillation layer () to values (&#x3bb;) at which the sensitive layer () has a higher sensitivity.

X-ray detector with in-pixel processing circuits

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Aachen, Germany

Gunter Zeitler