Infineon Technologies Ag

Gunter Reuscher

Frank Fischer

Gottfried Landwehr

Thomas Litz

Markus Keim

Thierry Baron

Hans-Jurgen Lugauer

An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.

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Wurzburg, Germany

Gunter Reuscher