Semikron Elektronik Gmbh &co.kg

Semikron Danfoss Elektronik Gmbh & Co., Kg

Gunter Königsmann

Harald Kobolla

Peter Beckedahl

Bastian Vogler

Markus Hofmair

Markus Müller

Bernhard Kalkmann

Alexander Mühlhöfer

Günter Katzenberger

Daniel Obernöder

Oliver Behr

Johannes Krapp

Mario Mitzel

Haldun Calisir

Alexander Mühlhofer

Rüdiger Bode

Do Nascimento Jair

Markus Hofmeier

A circuit arrangement and a method for actuating a power semiconductor switch wherein said power semiconductor switch has a load current input, a load current output and a control input, having a first voltage detection device, which is able to be switched on and off, for detecting a first voltage present between the load current input and the load current output, a second voltage detection device, which is able to be switched on and off, for detecting a second voltage present between the control input and the load current output, and having a regulating device that is designed to cyclically assess a second voltage value of the second voltage and, if a second threshold value of the second voltage value is reached, to switch on the first voltage detection device, in particular if no further fault signal is present.

Circuit arrangement and method for actuating a power switch

A control device for a power semiconductor switch includes an actuating device, which on a third control device terminal, upon the reception of a switching on command, generates an actuating voltage for the switching on of the power semiconductor switch and, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, and a current detection circuit, which generates a first high-current signal if an actuating voltage assumes a voltage value at which the power semiconductor switch is switched on, and a primary voltage of the power semiconductor switch applied between first and second control device terminals exceeds a first power semiconductor switch primary voltage value. The actuating device, upon the reception of an switching off command, generates an actuating voltage for the switching off of the power semiconductor switch, such that the actuating voltage is reduced such that the time interval elapsing between a first actuating voltage value, assumed by the actuating voltage upon the reception of the switching off command, and the achievement of a second actuating voltage value of the actuating voltage, which is equal to 10% of the first actuating voltage value, is greater in the presence of the first high-current signal than in the absence of the first high-current signal.

Control device for power semiconductor switch

A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal. A blocking circuit blocks the output of the overcurrent detection signal from the overcurrent detection circuit, if a control current flowing in the third control device terminal for the actuation of the power semiconductor switch exceeds a first current value and/or is designed to block the output of the overcurrent detection signal from the overcurrent detection circuit, if the actuation voltage is smaller than a first voltage value.

Control device for a power semiconductor switch

Growing community of inventors

Langensendelbach, Germany

Gunter Königsmann