Lg Electronics Inc.

Gunho Kim

Bongchu Shim

Hyunho Lee

Soohyun Kim

Changseo Park

Wonseok Choi

Jungsub Kim

Yongil Shin

Jinsung Kim

Minwoo Lee

Hyun Sup Lee

Hyunwoo Cho

Jinhyung Lee

Kisu Kim

Dohee Kim

Youngdo Kim

Myoungsoo Kim

Younho Heo

Yoonchul Kim

The display device includes a substrate, first assembly wiring, second assembly wiring, a partition, and first to third semiconductor light emitting devices. Each of the plurality of pixels includes first to third sub-pixels. The first to third assembly holes are located in the first to third sub-pixels. The first assembly wiring includes a first bus wiring in a plurality of pixels, and a plurality of first branch wirings branching from the first bus wiring. The second assembly wiring includes a second bus wiring in a plurality of pixels, and a plurality of second branch wirings branching from the second bus wiring. Each of the first to third semiconductor light emitting devices may be disposed in first to third assembly holes between the first bus wiring, the second bus wiring, the first branch wiring, and the second branch wiring.

Display device

An overlapping assembly substrate structure for semiconductor light emitting devices, includes a first assembly substrate structure and a second assembly substrate structure disposed spaced apart from each other. The first assembly substrate structure can include a first electrode and a second electrode spaced apart by a first distance and a first partition wall having a circular first assembly hole to accommodate a semiconductor light emitting device having a circular shape. Further, the second assembly substrate structure can include a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and a second partition wall having an elliptical second assembly hole to accommodate a semiconductor light emitting device having an elliptical shape.

Assembly substrate structure of semiconductor light emitting device and display device including the same

Discussed is a self-assembly apparatus for a plurality of semiconductor light-emitting devices, and a method for self-assembly of the plurality of semiconductor light-emitting devices, whereby the apparatus includes a chamber accommodating the plurality of semiconductor light-emitting devices and a fluid; a transferor to transfer a substrate to an assembly position; a magnet to apply a magnetic force to the plurality of semiconductor light-emitting devices; a position controller to control a position of the magnet; and a vibration generator in contact with the fluid to generate a vibration in the fluid to separate the plurality of semiconductor light-emitting devices from each other while in the fluid, wherein an electric field is produced in the substrate while the plurality of semiconductor light-emitting devices are moved according to a change of the position of the magnet.

Self-assembly apparatus and method for semiconductor light-emitting devices

The present invention relates to a display device having a structure in which an assembly substrate on which self-assembly has taken place can be used as a final substrate, and a method for manufacturing same. According to an embodiment of the present invention, first-conductive-type electrodes of vertical-type semiconductor light-emitting elements can be connected to seed metal, which is used as a wiring electrode, via a solder part, and thus there is the effect of directly using, as a final substrate, an assembly substrate on which the vertical-type semiconductor light-emitting elements are self-assembled, without an additional transfer process.

Display device using semiconductor light-emitting elements and manufacturing method therefor

Discussed is an assembly board for use in a method for manufacturing a display device which allows semiconductor light emitting diodes to be seated at preset positions on the assembly board using an electric field and a magnetic field, the assembly board including a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; and barrier ribs having a plurality of grooves for guiding the semiconductor light emitting diodes to the preset positions and formed on the base portion, wherein each of the plurality of grooves is arranged to overlap only one assembly electrode of the plurality of assembly electrodes such that an electric field is formed between the plurality of grooves adjacent to each other.

Display device manufacturing method, and substrate for manufacture of display device

Discussed is an assembly board including a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion at predetermined intervals; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; barrier ribs stacked on the dielectric layer and defining cells in which semiconductor light emitting diodes are seated at the predetermined intervals along an extending direction of the plurality of assembly electrodes so as to overlap a portion of the plurality of assembly electrodes; and a voltage applying unit connected to at least opposite ends of the plurality of assembly electrodes to apply one or more voltage signals to the plurality of assembly electrodes, wherein a voltage signal of the same polarity is applied to the plurality of assembly electrodes from the voltage applying unit connected to the opposite ends.

Substrate for manufacturing display device and method for manufacturing display device

According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising: a light absorbing layer comprising a compound semiconductor; a first electrode positioned on a front surface of the light absorption layer; a first contact layer positioned between the light absorbing layer and the first electrode; a second electrode positioned on a rear surface of the light absorbing layer and having a sheet shape; and a second contact layer positioned between the light absorbing layer and the second electrode. The second contact layer is partially formed on the rear surface of the light absorbing layer on the projection surface, and the second electrode includes a first portion in direct contact with the second contact layer and a second portion located between the first portions.

Compound semiconductor solar cell

A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.

Compound semiconductor solar cell and method of manufacturing the same

Disclosed is a method of manufacturing a compound semiconductor solar cell according to an embodiment of the invention. The method of manufacturing the compound semiconductor solar cell according to the embodiment of the invention includes forming a plurality of compound semiconductor layers of at least two elements and including a base layer and an emitter layer, the base layer including a first conductivity type dopant to have a first conductivity type and the emitter layer including a second conductivity type dopant to have a second conductivity type. The forming of the plurality of compound semiconductor layers includes at least one of a process-temperature change period and a growth-rate change period.

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Seoul, South Korea

Gunho Kim