Siltronic Ag

Gundars Ratnieks

Ludwig Altmannshofer

Andreas Sattler

Georg Raming

Simon Zitzelsberger

Frank Muemmler

Goetz Meisterernst

Josef Lobmeyer

Alfred Holzinger

Martin Moeller

Johann Landrichinger

Janis Virbulis

Maksims Surovovs

Walter Häckl

Frank Mümmler

Martin Möller

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving

Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer

A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.

Method for growing a single crystal by crystallizing the single crystal from a float zone

Single crystals are produced by means of the floating zone method, wherein the single crystal crystallizes below a melt zone at a crystallization boundary, and the emission of crystallization heat is impeded by a reflector surrounding the single crystal, wherein the single crystal is heated in the region of an outer edge of the crystallization boundary by means of a heating device in a first zone, wherein a distance &#x394; between an outer triple point Tat the outer edge of the crystallization boundary and a center Z of the crystallization boundary is influenced. An apparatus for producing the single crystal provides a heat source below the melting induction coil and above the reflector.

Method and apparatus for producing a single crystal

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Burghausen, Germany

Gundars Ratnieks