Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Gun-wu Ju

Yong-hwa Park

Yong-chul Cho

Yong-Tak Lee

Chang-young Park

Byung-hoon Na

Hee-ju Chio

Jang-woo You

An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.

Optical device including three-coupled quantum well structure having multi-energy level

Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

Optical device including three coupled quantum well structure

A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.

Transmissive image modulator including stacked diode structure having multi absorption modes

Growing community of inventors

Daegu, South Korea

Gun-wu Ju