Nissan Chemical Corporation

Thin Film Electronics Asa

Gun Son

Masahisa Endo

Yuichi Goto

Kentaro Nagai

Rikimaru Sakamoto

Wataru Shibayama

Tokio Nishita

Shun Kubodera

Kentaro Negai

A resist underlayer film-forming composition having a dramatically improved crosslinking ability over conventional compositions, and further, a resist underlayer film-forming composition that crosslinks with a component of a resist material, in order to improve the adhesion of a resist underlayer film to a resist pattern. A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of formula (1) and a structural unit of formula (2): (wherein each Ris independently a hydrogen atom or a methyl group; each Ris independently a Calkylene group; Ris a single bond or a methylene group; A is a linear, branched, or cyclic aliphatic group having a carbon atom number of 1 to 12 and optionally having a substituent, or a Caromatic or heterocyclic group optionally having a substituent; and Pr is a protecting group); a crosslinking agent; an organic acid catalyst; and a solvent.

Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage

A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Thioglycoluril compound, and method for producing same

There are provided novel glycolurils, and methods for producing the same. A nitrogen-containing cyclic compound of following formula (1):  (wherein any two of R, R, R, and Rare glycidyl groups, and the remaining two are methoxymethyl groups), and the nitrogen-containing cyclic compound of formula (1) is represented by, for example, following formula (1A) or (1B): 

Nitrogen-containing cyclic compounds and methods for producing the same

There is provided a novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein Ris a methyl group or an ethyl group; two Rs are each a Calkylene group; and two Rs are each a methyl group, an ethyl group, or a Calkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

Isocyanuric acid derivative having alkoxyalkyl groups and method for producing the same

There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two Rs are each a Calkyl group, two Rs are each a Calkylene group, two Rs are each a Calkyl group, two Rs are each a Calkylene group, and two Rs are each a Calkyl group).

Monoglycidyl isocyanurate compound and production method therefor

A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a Calkyl group having at least one ether bond on the main chain).

There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100&#xb0; C. to 425&#xb0; C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

High-molecular-weight polysilane and method for producing same

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Method of producing silicon hydride oxide-containing solvent

A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH), where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiRR)(where Rand Rare each a hydrogen atom, a Calkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiRR)(where Rand Rare each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiRR)with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40&#xb0; C. to 80&#xb0; C. under a reduced pressure of 0 to 30 Torr.

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Toyama, Japan

Gun Son