Samsung Electronics Co., Ltd.

Gun-Joong Lee

Tai-Su Park

Si-Young Choi

Yu-Gyun Shin

Dong-Chan Kim

Jong-Ryeol Yoo

Dong-Kyu Lee

Seong-Hoon Jeong

Jong-Hoon Kang

Jeong-Do Ryu

Joo-Byoung Yoon

Sang-Chul Han

Young-Dong Lee

Jung-Sup Oh

Jung-Soo An

Jung-Geun Park

A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.

Methods of fabricating gate insulating layers in gate trenches and methods of fabricating semiconductor devices including the same

In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices

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Suwon-si, South Korea

Gun-Joong Lee