Dnf Co., Ltd.

Gun-Joo Park

Sang Ick Lee

Myong Woon Kim

Se Jin Jang

Sung Gi Kim

Byeong-il Yang

Joong Jin Park

Jeong Joo Park

Sam Dong Lee

Sang-Do Lee

Hee Yeon Jeong

Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

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Daejeon, South Korea

Gun-Joo Park