Skhynix Inc.

Sk Hynix Nand Product Solutions Corp.

Gulzar Kathawala

Ming Zhang

Jonathan De Vries

Taehun Park

Wanik Cho

Yushin Ahn

In accordance with some embodiments of the present disclosure, a method is performed by processing circuitry of a storage device for writing data to memory of a storage device. The method is related to executing a program to write data written in a plurality of single-layer cells (SLCs) in a first portion of the memory to a plurality of multi-level cells (MLCs) in a second portion of the memory using a single program command. The single program command includes an address of each SLC in the first portion of the memory and optionally, additional information regarding SLC read-level shifts. Executing the single program command includes reading from each SLC of the plurality of SLCs, storing at least some of the respective SLC data in the plurality of latches, and writing the SLC data that was stored in the plurality of latches to the plurality of MLCs.

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Fremont, CA, United States of America

Gulzar Kathawala