Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Guillaume Rodriguez

Aomar Halimaoui

Xavier Baillin

Lamine Benaissa

Bruno Imbert

Christophe Dubarry

Paul Gondcharton

Chiara Sabbione

Emmanuelle Lagoutte

Laurent Ortiz

Cécile Moulin

Magali Tessaire

A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSi. A method for manufacturing the microelectronic device is also provided.

Electrically conductive element

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250&#xb0; C.

Direct bonding method

The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.

Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor

A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.

Treatment method of a getter material and encapsulation method of such getter material

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Le Champ Pres Froges, France

Guillaume Rodriguez