Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (crolles 2) Sas

Guillaume Rodriguez

Aomar Halimaoui

Xavier Baillin

Lamine Benaissa

Bruno Imbert

Christophe Dubarry

Paul Gondcharton

Chiara Sabbione

Emmanuelle Lagoutte

Laurent Ortiz

Magali Tessaire

Cécile Moulin

A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSi. A method for manufacturing the microelectronic device is also provided.

Electrically conductive element

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250&#xb0; C.

Direct bonding method

The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.

Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor

A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.

Treatment method of a getter material and encapsulation method of such getter material

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Le Champ Pres Froges, France

Guillaume Rodriguez