Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Safran Electronics & Defense

Safran

Sagem Defense Securite

Guillaume Lehee

Guillaume Jourdan

Alain Jeanroy

Jean-Christophe Riou

Audrey Berthelot

Bruno Fain

Philippe Onfroy

Mikaël Colin

Olivier Vancauwenberghe

Jean-Sébastien Mace

Microelectronic structure comprising at least one movable mass that is mechanically connected to a first mechanical element by a first mechanically linking connector and to a second mechanical element () by electrically conductive second mechanically linking connector, and a device for electrically biasing the second mechanically linking connector, the second mechanically linking connector being such that they are the seat of a thermo-piezoresistive effect, the second linking connector and the movable mass being placed with respect to each other so that a movement of the movable mass applies a mechanical stress to the second linking connector, wherein the electrically biasing device are DC voltage biasing device and form, with at least the second mechanically linking connector, a thermo-piezoresistive feedback electric circuit.

Microelectronic structure with viscous damping controlled by controlling a thermo-piezoresistive effect

A microdevice () comprising a movable element () capable of moving relative to a fixed part (), produced in first and second layers of material () arranged one above the other such that the movable element comprises a portion () of the first layer and a portion () of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure () formed in the first and/or second layer of material.

Microdevice comprising at least two movable elements

The invention relates to a measurement device comprising a suspended semiconductor wire, a first control circuit designed to apply and/or read a first electrical signal between first and second ends of the suspended semiconductor wire and a second control circuit designed to apply and/or read a second electrical signal between first and second intermediate nodes of the suspended semiconductor wire.

Measurement device comprising a suspended semiconductor wire

A microelectromechanical structure with electrothermal actuation including a fixed part, a moveable part, a first electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part and a second electrothermal actuating beam enabling an electric current to flow from the fixed part to the moveable part, the beams being mechanically connected to the moveable part enabling a displacement of the moveable part by electrothermal actuation, an electrically conductive connecting element connecting the moveable part to the fixed part, a first connector for connecting the first actuating beam to a first polarisation source and a second connector for connecting the second actuating beam to a second polarisation source, such that the first and the second can be polarised differently and separately.

Microelectromechanical and/or nanoelectromechanical structure with electrothermal actuation comprising at least two differently polarisable actuating beams

An electrothermally actuated microelectromechanical and/or nanoelectromechanical structure including a stationary portion, at least one portion which is movable relative to the stationary portion, at least one electrothermal actuation beam which makes it possible to cause an electric current to flow from the stationary portion to the movable portion, is mechanically connected to the movable portion and is intended to move the movable portion relative to the stationary portion by electrothermal actuation, and at least one electrically conductive connection element electrically connecting the movable portion to the stationary portion, the actuation beam having a thickness of no greater than half one thickness of the movable portion and no greater than half one thickness of the connection element.

Electrothermally actuated microelectromechanical and/or nanoelectromechanical structure providing increased efficiency

Microelectronic structure comprising a mobile mass mechanically linked to a first and to a second mechanical element by first and second mechanical linking device respectively, a polarisation source for the second mechanical linking device. The second mechanical linking means comprises two linking elements and a thermal reservoir placed between the linking elements, where at least one of the linking elements is made of piezoresistive material, where at least one of the first and second linking elements exhibit thermoelasticity properties. The thermal reservoir exhibits a thermal capacity which is different from those of the linking elements. The second linking device and the mobile mass are arranged relative to each other such that displacement of the mobile mass applies a mechanical stress to the second linking means.

Microelectronic structure comprising means of control of viscous damping

A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm. The resonator and the first strain gauge are arranged to form zones of doping that are substantially identical in kind and in concentration.

Growing community of inventors

Boulogne Billancourt, France

Guillaume Lehee