Nxp B.v.

Guillaume Lebailly

Gian Hoogzaad

Klaas-Jan De Langen

Frederic Francois Villain

An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

RF amplifier

Presented is an interface circuit for connecting a RF antenna to a RF device. The interface circuit comprises: a first terminal adapted to connect to the RF antenna; a second terminal adapted to connect to the RF device; an inductive load connected to the second terminal; a first switch adapted to connect the inductive load to the first terminal; and a resistive load connected to the second terminal via a second switch.

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Frenouville, France

Guillaume Lebailly