American Air Liquide, Inc.

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Guillaume Husson

Gennadiy Itov

Yang Wang

Jean-Marc Girard

Grigory Nikiforov

Glenn Kuchenbeiser

Zhiwen Wan

Peng Zhang

Antonio Sanchez

Manish Khandelwal

Matthew Damien Stephens

Reno Pesaresi

Sean Kerrigan

Cole Ritter

David Orban

Venkateswara R Pallem

Stefan Wiese

Nicolas Blasco

Yumin Liu

Feng Li

Kohei Tarutani

Claudia Fafard

Bin Sui

A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof.

Process for producing liquid polysilanes and isomer enriched higher silanes

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SiHwith n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH), disilane (SiH), trisilane (SiH), and mixtures thereof.

Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide

N&#x2014;H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications

Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)-E)SiH&#x2014;SiH(E-(CR)-E), wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Organodisilane precursors for ALD/CVD silicon-containing film applications

Disclosed are methods of synthesizing an amino(halo)silane comprising the step of reacting a halosilane having the formula SiHXwith an aminosilane having the formula SiH(NRR)to produce the amino(halo)silane having the formula SiHX(NRR), wherein X=Br or I; each Rand Ris independently selected from a C-Calkyl, aryl, or hetero group; a, d, and w independently=1 to 4; b+c=2a+2; b=1 to 2a+1; c=1 to 2a+1; e+f=2d+2; e=1 to 2d+1; f=1 to 2d+1; x+y+z=2w+2; and Rand Rmay be joined to form a nitrogen-containing heterocycle.

Synthesis methods for amino(halo)silanes

Growing community of inventors

Newark, DE, United States of America

Guillaume Husson