Mitsubishi Materials Corporation

Stmicroelectronics(tours) Sas

Mitusbishi Materials Corporation

Stmicroelectronics (Rousset) Sas

Guillaume Guegan

Hideaki Sakurai

Nobuyuki Soyama

Toshiaki Watanabe

A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: BaSrTiO(wherein 0.2&#x3c;x&#x3c;0.6 and 0.9&#x3c;y&#x3c;1.1), the liquid composition is an organic metal compound solution in which a raw material for composing the composite metal oxide A and a raw material for composing the composite oxide B are dissolved in an organic solvent at a proportion having a metal atom ratio expressed by the formula shown above and a molar ratio between A and B in the range of 0.001&#x2266;B/A&#x3c;0.15.

Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: BaSrTiO, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002&#x3c;B/A&#x3c;0.05, and the molar ratio C/A of the composite oxide C to the composite metal oxide A is within the range of 0.002&#x3c;C/A&#x3c;0.03.

Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method

A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300&#xb0; C., drying at a predetermined temperature within a range from ambient temperature to 500&#xb0; C., and calcining at a predetermined temperature within a range of 500 to 800&#xb0; C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

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Tours, France

Guillaume Guegan