Stmicroelectronics S.a.

Guillaume Bertrand

Philippe Cathelin

Raphael Paulin

Augustin Monroy Aguirre

An integrated electronic device is supported by a substrate of a silicon on insulator type. At least one transistor is formed in and on a semiconductor film of the substrate. The transistor includes a drain region and a source region of a first conductivity type and a substrate (body) region of a second conductivity type lying under a gate region. An extension region laterally continues the substrate (body) region beyond the source and drain regions and borders, in contact with, the source region through a border region having the first conductivity type. This supports formation of an electrical connection of the source region and the substrate (body) region.

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Saint Martin d'Heres, France

Guillaume Bertrand