University of California

Avalon Photonics Ag

Guilhem Almuneau

Larry Allen Coldren

Eric M Hall

Shigeru Nakagawa

Michael Moser

A method for aperturing a vertical-cavity surface-emitting laser (VCSEL), for increasing the external quantum efficiency and decreasing the threshold current, involves an etching mixture that is applied to the active region of the VCSEL. The etching mixture is designed in a manner to selectively etch the active region of the VCSEL at a rate substantially faster than the etch rate of at least one of the multiple DBRS associated with the VCSEL.

Method for aperturing vertical-cavity surface-emitting lasers (VCSELs)

A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Use of antimony in the DBR structure allows current to be pumped through the DBRs into an active region to provide for long wavelength, continuous wave operation of the VCSEL.

Distributed bragg reflectors incorporating SB material for long-wavelength vertical cavity surface emitting lasers

A vertical-cavity surface-emitting laser comprises one or more quantum well layers and one or more barrier layers to define an gain region, a first mirror means and a second mirror means, wherein the first and second mirror means define a resonator. Moreover, the vertical-cavity surface-emitting laser further comprises a first indium phosphide layer adjacent to the gain region and a second indium phosphide layer adjacent to the gain region to define a laser cavity.

Indium phosphide-based vertical-cavity surface-emitting laser

A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) includes alternating layers of different semiconductor materials to improve thermal and electrical characteristics for the VCSEL. Use of particular materials reduces the thermal resistivity of the DBR and allows heat to dissipate quickly during operation of the VCSEL.

Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties

A distributed Bragg reflector for a vertical cavity surface emitting laser has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Accurate control of the composition of the semiconductor material system must be maintained to result in a distributed Bragg reflector suitable for use in a VCSEL. A method of fabricating the distributed Bragg reflector includes calibrating the incorporation of at least one of the elements into the material system as different semiconductor materials are grown on a substrate.

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Aesch, Switzerland

Guilhem Almuneau