Infineon Technologies Ag

Guido Strotmann

Karsten Guth

Thilo Stolze

Reinhold Bayerer

Reinhold Spanke

Alfred Kemper

Marianna Nomann

Mark Essert

Thomas Nuebel

Christian Steininger

Achim Froemelt

Peter Koechling

Achim Cordes

Dirk Froebus

One aspect of the invention relates to a method for producing a circuit carrier. For this purpose, an electrically insulating carrier is provided, having an upper side and also an underside opposite from the upper side. A first metal foil and a hardening material are likewise provided. Then, an upper metallization layer, which is arranged on the upper side and has a hardening area, is produced. In this case, at least one contiguous portion of the hardening area is created by at least part of the hardening material being diffused into the first metal foil.

Method for producing a circuit carrier and for connecting an electrical conductor to a metallization layer of a circuit carrier

One aspect of the invention relates to an electronic module comprising a module housing and an electrically conductive connection element. The connection element has a first portion and a second portion, and also a shaft between the first portion and the second portion. The connection element, which is provided with a non-metallic coating in the region of the shaft, is injected together with the coating in the region of the shaft into the module housing, such that the connection element is fixed in the module housing.

Electronic module and method for producing an electronic module

A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures.

Soldering method

In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.

Power semiconductor arrangement and method for producing a power semiconductor arrangement

In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.

Method for producing a power semiconductor arrangement

A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.

Method and apparatus for ultrasonic welding

A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. The fluid is frozen so that the fluid forms a solid body. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.

Method and apparatus for ultrasonic welding or bonding

A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Semiconductor module with current connection element

A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.

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Anröchte, Germany

Guido Strotmann