Globalfoundries Inc.

Advanced Micro Devices Corporation

Guido Koerner

Markus Lenski

Anthony Mowry

Ralf Otterbach

Thorsten E Kammler

Christof Streck

By selectively modifying the spacer width, for instance, by reducing the spacer width on the basis of implantation masks, an individual adaptation of dopant profiles may be achieved without unduly contributing to the overall process complexity. For example, in sophisticated integrated circuits, the performance of transistors of the same or different conductivity type may be individually adjusted by providing different sidewall spacer widths on the basis of an appropriate masking regime.

Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation

According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budget in manufacturing sophisticated field effect transistor elements. The etch recipes used enable a controlled removal of material, wherein other device components are not unduly degraded by the oxidation and etch process.

Method of forming an epitaxial layer for raised drain and source regions by removing contaminations

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Dresden, Germany

Guido Koerner