International Business Machines Corporation

Intel Magnetics, Inc.

Magnesys

Guido Galli

Max R Lorenz

Karl H Loeffler

Charles Chiou

Baylor B Triplett

Barry R Lieberman

John E Davies

Alexander A Grillo

Carlo Ferrando

A bubble generator for use in a bubble memory device combines a nucleating generator and replicating generator in a unified structure with first and second hairpins disposed at respective first and second regions to define nucleation and replication sites. The conductor layer is configured such that the same polarity of current flow causes magnetic fields of opposite sense at the nucleation and replication sites. The nucleation site is used only to generate the seed bubble required at the replication site. Once the seed bubble is present, the replication site is utilized to produce the data stream. The nucleation and replication sites are preferably spaced apart with a propagation track extending from the former to the latter, and the first and second hairpins are series-connected with the series connection crossing the propagation path. The hairpins are preferably directed oppositely so that when the rotating field is in the right phase for replication, it is 180.degree. out of phase for nucleation.

Combined nucleate-replicate single wall domain generate structure

A process for removing a liquid phase epitaxial layer of material from a wafer substrate is disclosed. An etch melt is provided which is substantially the same as that used to grow the epitaxial layer on the wafer surface. The temperature of the etch melt is adjusted such that it exceeds an equilibrium temperature of the epitaxial layer, and lies below an equilibrium temperature of the substrate, such that the epitaxial layer is etched away without affecting the substrate material. The wafer is immersed and maintained within the melt until the epitaxial layer is removed. The wafer may then be reused without repolishing.

Process for removing a liquid phase epitaxial layer from a wafer

A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (H.sub.o), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.

Method for forming a liquid phase epitaxial film on a wafer

A nozzle array structure for pressurized fluid jets includes a uniform deposited membrane having an array of uniform small orifices therein overlaying a planar substrate having an array of larger aperture openings therethrough with approximately the same central axes as the orifice array. The method of making includes forming a substrate of a planar single crystal material oriented with the (100) planes parallel to the surface. A membrane comprising a uniform coating of an inorganic material is applied to the planar surface of the substrate. The substrate is preferentially etched from the rear surface to form an array of openings therein extending therethrough to the membrane. The membrane is then selectively eroded to form an array of uniform small orifices therein.

Ink jet nozzle method of manufacture

Ink jet nozzle structure

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Saratoga, CA, United States of America

Guido Galli