Stmicroelectronics S.r.l.

Guido Desandre

Maurizio Francesco Perroni

Salvatore Polizzi

Giuseppe Castagna

A row decoder circuit for a phase change non-volatile memory device may include memory cells arranged in a wordlines. The device may be configured to receive a first supply voltage and a second supply voltage higher than the first supply voltage. The row decoder may include a global predecoding stage configured to receive address signals and generate high-voltage decoded address signals in a range of the second supply voltage and a biasing signal with a value based upon an operation. The row decoder may include a row decoder stage coupled to the global predecoding stage. The row decoder stage may include a selection driving unit configured to generate block-address signals based upon the high-voltage decoded address signals and a row-driving unit configured to generate a row-driving signal for biasing the wordlines based upon the block-address signals and the biasing signal.

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Brugherio, Italy

Guido Desandre