Wuhan China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Gui Chen

Jingfeng Xue

Qiang Gong

Xin Hui Zhang

Mang Zhao

Caiqin Chen

Yong Tian

Guanghui Hong

Shihpo Chou

Chao Wang

Shibo Zhou

Xiaochen Li

A display device is disclosed. The display device includes a control module and a display panel connected to the control module. Wherein, the display panel includes a plurality of pixel electrodes; a plurality of first common electrodes disposed opposite to the pixel electrodes and connected to the control module by common connecting lines; and a liquid crystal layer disposed between the first common electrodes and the pixel electrodes. Wherein, the control module is configured to allow a constant electrical potential difference to exist between the first common electrodes and the pixel electrodes.

Display device

The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LIPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.

Low temperature poly-silicon TFT substrate and manufacturing method thereof

A self-capacitive touch panel structure includes a touch detection chip and multiple self-capacitance electrodes arranged as a matrix and isolated with each other. Each self-capacitance electrode connected with the touch detection chip through a connection line. Each self-capacitance electrode electrically connected with a corresponding connection line through at least one via hole. A group of connection lines connected with a same column of the multiple self-capacitance electrodes are divided into an odd number group and an even number group. The connection lines in the odd number group are sequentially connected with a terminal of a corresponding self-capacitance electrode of the same column of the self-capacitance electrodes. The connection lines in the even number group are sequentially connected with a terminal of a corresponding self-capacitance electrode of the same column of the self-capacitance electrodes. An in-cell touch panel and a liquid crystal display including above structure are also disclosed.

Self-capacitive touch panel structure, in-cell touch panel, and liquid crystal display

The present disclosure provides a gate driver on array (GOA) circuit, where the GOA circuit includes a GOA driving chip, a GOA driving signal line, an array substrate test chip, a test signal line, and a GOA protecting circuit. The GOA driving chip is used to generate a scan driving signal. The GOA driving signal line is used to transmit the scan driving signal to a corresponding scan line. The array substrate test chip is used to generate an array substrate test signal. The test signal line is used to transmit the array substrate test signal to the corresponding scan line. The GOA protecting circuit is arranged between the GOA driving signal line and the test signal line.

Gate driver on array circuit and LCD panel having GOA protecting circuit

The present disclosure relates to the technical field of display, whereby the technical problem of mura of the touch panel can be solved. In the touch panel, each first signal line, after being electrically connected with a corresponding touch electrode, further extends to one end of the touch panel far from the driving circuit, so that each touch electrode overlaps with a group of first signal lines that are connected with the column of touch electrodes including the touch electrode. The touch panel according to the present disclosure can be used in liquid crystal television, liquid crystal display device, mobile phone, tablet personal computer and other display devices.

Display device capable of avoiding mura for improving the display effect of the touch panel

The present disclosure provides a gate driver on array (GOA) circuit. A low level signal source is used to output a low level signal, a first high level signal source is used to output a first high level signal, and the second high level signal source is used to output the second high level signal. A cascade signal latch module is used to latch a cascade signal of a current grade. A gate driving signal generating module generates a preparation gate driving signal of the current grade. A gate driving signal outputting module is used to output a gate driving signal of the current grade.

Gate driver on array circuit and LCD panel

A GOA circuit includes GOA circuit units. Each GOA circuit has a holding module A first transistor and a second transistor in the holding module holds the voltage imposed on the first control node to be at high voltage level. Also, the transistors form a direct current passage between the first control node and a first fixed voltage at high voltage level so the voltage imposed on the first control node is not lowered due to electricity leakage. The GOA circuit unit can resolve the problem of easy leakage of electricity. When the scanning signals are output by the GOA circuit unit, the stability is highly ensured.

Gate driver on array circuit and liquid crystal display using the same

A gate driver on array circuit includes a first driver module and a second driver module. The first driver module includes a first driver unit, a first output unit, and a first reset unit. The second driver module includes a second driver unit, a second output unit, and a second reset unit. The first output unit is used for generating a present stage scan drive signal and a present stage cascade signal. The second output unit is used for generating the present stage scan drive signal and the present stage cascade signal.

Gate driver on array circuit and liquid crystal display panel

A liquid crystal display panel and a thin film transistor array substrate are provided. The thin film transistor array substrate includes a pixel area and a fan-out area. The fan-out area has a groove. The thin film transistor array substrate has a substrate, a light shielding layer, a buffer layer, a poly-silicon layer, a first insulating layer, a scan line layer, a second insulating layer, a data line layer, a third insulating layer, a common line layer, a touch-sensing line layer, a fourth insulating layer, and a pixel electrode layer. The present invention can prevent wire shorts.

Display panel and thin film transistor array substrate

The present disclosure relates to an array substrate and the manufacturing method thereof. The array substrate includes a glass substrate. The shading metal layer and the buffering layer are formed on the glass substrate in sequence. The TFT layer is formed on the buffering layer, and the TFT is arranged above the shading metal layer. The insulation layer and the organic layer are formed on the TFT layer in sequence. In addition, the pixel electrode layer connects to the source/drain of the TFT via the first through hole. The touch electrode layer connects to the shading metal layer via the second through hole. The passivation layer is configured between the pixel electrode layer and the touch electrode layer. In this way, the manufacturing process is simplified, and the coupling capacitance between the touch electrode and the signal line may be effectively reduced.

Array substrate and the manufacturing methods thereof

The present invention provides a touch control structure, comprising a touch control zone, and the touch control zone comprises touch control units and first lead wires corresponding to the touch control units, and the touch control units are arranged in array having a plurality of column of the touch control units, and the touch control units of each column are aligned in spaces from top to bottom in the touch control structure, and the first lead wires sequentially penetrate the touch control units in each column from top to bottom in the touch control structure, and the first lead wire is electrically coupled to one touch control unit, and is disconnected with the next touch control unit, which is adjacent to the touch control unit in the same column and close to the top of the touch control structure.

Touch control structure and liquid crystal display having the touch control structure

A device for manufacturing an array substrate includes an exposure device for using a halftone mask to form a photoresist pattern layer on a gate insulation layer of a substrate. A polysilicon pattern layer is disposed on the substrate. A gate insulation layer covers the polysilicon pattern layer. The photoresist pattern layer includes a hollow portion corresponding to a heavily doping region of the polysilicon pattern layer, a first photoresist portion corresponding to a lightly doping region of the polysilicon pattern layer, and a second photoresist portion corresponding to an undoped region of the polysilicon pattern layer. The first photoresist portion is thinner than the second photoresist portion. A doping device is used for performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region are formed simultaneously.

Doping method for array substrate and manufacturing equipment of the same

A control circuit of a thin film transistor, comprising: a substrate; a silicon nitride layer disposed on the substrate; a silicon dioxide layer disposed on the silicon nitride layer; a light shielding layer disposed inside the silicon nitride layer, which comprising a first light shielding region and a second light shielding region; at least one N type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the first light shielding region; at least one P type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the second light shielding region; each of the N type metal oxide semiconductor and the P type metal oxide semiconductor has a gate electrode layer, a first control signal received by voltage pulses of the gate electrode layer synchronized with a second control signal received by the light shielding layer in voltage variation.

Control circuit of thin film transistor

The present invention provides a thin film transistor array substrate and a liquid crystal display panel. The thin film transistor array substrate comprises: a substrate; a light shielding layer, located at a middle part on a surface of the substrate; a buffer layer, covering the light shielding layer; a Low Temperature Poly-silicon layer, being located on the buffer layer, and corresponding to the light shielding layer; an isolation layer, covering the Low Temperature Poly-silicon layer, and the isolation layer comprises a through hole, wherein a width of the through hole is smaller than a width of the light shielding layer; a metal layer, located on the isolation layer, and the metal layer is connected with the Low Temperature Poly-silicon layer via the through hole. The thin film transistor array substrate and the liquid crystal display panel have a higher aperture ratio.

Thin film transistor array substrate and liquid crystal display panel

The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.

Growing community of inventors

Guangdong, China

Gui Chen