Infineon Technologies Ag

Guenther Wellenzohn

Hans-Joachim Schulze

Mario Motz

Roland Rupp

Francisco Javier Santos Rodriguez

Wolfgang Scherr

Werner Schustereder

Jens Peter Konrath

Bernhard Goller

Carsten Schaeffer

Michael Sorger

Magdalena Forster

Katharina Schmut

Philemon Schweizer

Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500&#xb0; C.

Forming a contact layer on a semiconductor body

A self powered memory system is disclosed. The system includes a volatile supply component, a battery component, a switch component, and a volatile memory component. The volatile supply component is configured to provide a time varying supply. The battery component is configured to generate a non-volatile supply. The switch component is configured to generate a persistent supply from the time varying supply and the non-volatile supply. The volatile memory component is configured to maintain data by using the persistent supply.

Systems and methods for non-volatile memory

Growing community of inventors

Villach, Austria

Guenther Wellenzohn