Infineon Technologies Ag

Infineon Technologies Austria Ag

Guenther Ruhl

Hans-Joachim Schulze

Wolfgang Lehnert

Rudolf Berger

Roland Rupp

Horst Theuss

Klaus Elian

Raimund Foerg

Matthias Koenig

Anton Mauder

Hermann Gruber

Joachim Mahler

Hans-Joerg Timme

Markus Hammer

Alfons Dehe

Johannes Georg Laven

Michael Bernhard Sommer

Irmgard Escher-Poeppel

Klemens Pruegl

Gerhard Metzger-Brueckl

Karsten Kellermann

Christian Rottmair

Peter Irsigler

Stefan Kolb

Jochen Dangelmaier

Mathias Vaupel

Manfred Fries

Thomas Mueller

Andreas Strasser

Gunther Lippert

Michael Melzl

Reinhard Goellner

Christian Kegler

Thomas Zimmer

Thomas Hirsch

Florian Bachl

Doerthe Groteloh

Ralf Otremba

Markus Zundel

Gottfried Beer

Juergen Hoegerl

Georg Meyer-Berg

Manfred Engelhardt

Albert Birner

Rainer Markus Schaller

Frank Pueschner

Franz Jost

Peter Stampka

Helmut Brech

Franz Michael Darrer

Oliver Häberlen

Werner Robl

Rudolf Lehner

Thomas Spoettl

Markus Eckinger

Gerhard Poeppel

Tue Fatt David Wee

Thomas Kunstmann

Matthias Rose

Alexander Zoepfl

Herbert Roedig

Manfred Frank

Stephan Auer

Sebastian Beer

Sie Boo Chiang

Regina Kainzbauer

Ivan Nikitn

A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Method of manufacturing a template wafer

A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.

Fluid sensor, method for providing same, and method for determining a constituent of a fluid

A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

Wafer composite and method for producing a semiconductor component

A method for forming a silicon carbide semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate and forming a silicon carbide layer of the silicon carbide semiconductor device on the at least one graphene layer. At least one of forming the silicon carbide layer and forming the at least one graphene layer includes: heating the semiconductor substrate an inert gas atmosphere until a predefined temperature is reached.

Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device

Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

Temperature sensor

This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

Wafer composite and method for producing semiconductor components

A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

Process for the formation of a graphene membrane component, graphene membrane component, microphone and hall-effect sensor

A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

Semiconductor device including a heat sink structure

A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. The semiconductor device further includes a transistor wiring structure located adjacent to the graphene layer portion.

Semiconductor devices and methods for forming semiconductor devices

A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

Layer structure and method of manufacturing a layer structure

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.

Method of manufacturing a semiconductor device having graphene material

A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

Photo-acoustic gas sensor module having light emitter and detector units

According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

Sensor arrangement for particle analysis and a method for particle analysis

A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.

Semiconductor device and a method for forming a semiconductor

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Wuppertal, Germany

Guenther Ruhl