Ams Ag

Guenther Koppitsch

Jordi Teva

Ewald Stueckler

Martin Schrems

Rainer Minixhofer

Frederic Roger

Bernhard Loeffler

Ewald Wachmann

Karl Rohracher

Stefan Jessenig

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

An opening () is etched from a main surface () of a substrate () of semiconductor material by deep reactive ion etching comprising a plurality of cycles, each of the cycles including a deposition of a passivation in the opening and an application of an etchant. An additional etching is performed between two consecutive cycles by an application of a further etchant that is different from the etchant. The passivation layer () is thus etched above a sidewall () of the opening to remove undesired protrusions.

Method of producing an opening with smooth vertical sidewall in a semiconductor substrate

The method comprises the steps of providing a semiconductor body or substrate () with a recess or trench () in a main surface (), applying a mask () on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (), which is filled with a gas, and forming at least one opening () in the mask at a distance from the recess or trench, the distance () being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.

Masking method for semiconductor devices with high surface topography

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Lieboch, Austria

Guenther Koppitsch