Infineon Technologies Austria Ag

Robert Boschgmbh

Guenther Koffler

Francisco Javier Santos Rodriguez

Michael Knabl

Kae-Horng Wang

Frank Wolter

Holger Ruething

Christian Pluntke

Thomas Jacke

Timm Hoehr

Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more metal layers are deposited onto the substrate.

Metal deposition on substrates

A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Semiconductor system for a current sensor in a power semiconductor

Growing community of inventors

Ledenitzen, Austria

Guenther Koffler