Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Guenther Groenninger

Alvaro Gomez-Iglesias

Harald Koenig

Christian Lauer

Martin Mueller

A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

Semiconductor laser array and semiconductor laser array circuit arrangement

An edge emitting semiconductor laser comprising an active, radiation-generating zone (), and an common waveguide (), which is suitable for guiding the radiation generated in the active zone () within the semiconductor laser. The common waveguide () comprises a first n-doped layer () and a second n-doped layer (), which is arranged between the first n-doped layer () and the active zone (), wherein the refractive index nof the second n-doped layer () is greater than the refractive index nof the first n-doped layer () by a value dn.

Growing community of inventors

Seubersdorf, Germany

Guenther Groenninger