Osram Opto Semiconductors Gmbh

Guenter Spath

Simon Jerebic

Hans-Christoph Gallmeier

Michael Huber

Michael Kruppa

Mathias Kaempf

Ingo Neudecker

Raimund Schwarz

Korbinian Perzlmaier

David Racz

Markus Richter

A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Lighting device with color scattering layer and method for producing a lighting device

Disclosed is a radiation-emitting semi-conductor chip () comprising an epitaxial semi-conductor layer sequence () which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence () is applied on a a transparent substrate (), wherein the substrate () has a first main surface () facing the semi-conductor layer sequence (), a second main surface () facing away from the semi-conductor layer sequence () and a first lateral flank () arranged between the first main surface () and the second main surface (), and the lateral flank () has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips and optoelectronic component having a radiation-emitting semiconductor chip

The invention relates to an optoelectronic semiconductor chip () comprising a carrier () and a semiconductor body () having an active layer () provided for generating electromagnetic radiation. Said carrier () has a first main surface (A) facing the semiconductor body, a second main surface (B) facing away from the semiconductor body, and a sidewall (C) arranged between the first main surface and the second main surface. The carrier () has a structured region (C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component () comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Optoelectronic semiconductor chip, optoelectronic component and method for singulating semiconductor chips

A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Contacting an optoelectronic semiconductor component through a conversion element and corresponding optoelectronic semiconductor component

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Wuppertal, Germany

Guenter Spath